Prof.dr. Ion Munteanu
Curriculum vitae
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Munteanu
Ion was born in commune Lucăcești, district Bacău, Romania, on
August 14, 1940. He received the M.S. degree and Ph. D. degree from the Bucharest
University, Faculty of Physics, in 1966, and 1973, respectively. Sins 1967 he
has been with the Department of Solid State Physics, Faculty of Physics, Bucharest
University, where he is now Professor of Solid State Physics and Semiconductor
Materials and Devices. In 1975 he received the Prize for Physics of the Romanian
Academy for the group of works "Transport and relaxation phenomenon in solids". As a member
of the Teaching Staff he has been engaged in research and development work on
semiconductor materials and devices, current injection in solids, magnetoconcentration
effects, surface recombination, switching and memory phenomena in amorphous
thin films and junction devices. He is author or co-author of more then 100
scientific papers. He holds a number of patents in the semiconductor devices
area and is the author of some books on solid-state physics and optoelectronic
devices. Since 1990 he has been engaged in different official responsibilities:
from 1990 to 1992 he was the head of the Department of Solid State Physics,
Faculty of Physics, University of Bucharest; from 1992 to 1996 he was vice-dean
of the Faculty of Physics, University of Bucharest and in 1996 he was elected
as vice-rector of the University of Bucharest and is engaged in such problems
as human, material and financial resources of the Bucharest University.
II. Scientific
Problems of Interest
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Current Injection
in Solids and Related Phenomenon.
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Electrical and
Photoelectric Properties of Thin Semiconductor Films.
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Preparation,
Characterization and Properties of Some Semiconductor Compound Materials.
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Transport Phenomenon
in Amorphous Semiconductors.
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Long Time Relaxation
of Photoconductivity in Thin Semiconductor Films.
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Electronic,
Optical and Transport Properties of Semiconductor Polymers.
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Radiation Effects
in Semiconductor Materials and Devices.
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Electronic and
Optical Properties of Porous Silicon.
1. Influence of some n-type InSb properties
on the main parameters of infrared
photoconductive detectors.
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C.E.A.Grigorescu, S.A.Manea, M.F.Lăzărescu, T.Boțilă,
I.Munteanu, T.Necșoiu Materials Science and Engineering, B,Vol 44, p. 270-273, 1997.
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2. Annealing effects on electrical
and photoelectrical properties of polysilicon
films.
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N.Tomozeiu, I. Munteanu, S. Antohe, C. Flueraru,
R. Penciu
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3.
Performance of InAs Photoelectromagnetic Infrared Detectors at Room
Temperature.
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M.Logofătu. B.Logofătu, C.Grigorescu,
I.Munteanu
IEEE Proc. , Int. Semic. Conf. CAS-97 , p.297-300, 1997.
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4. Magnetic Field Sensor with linear
response.
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M. Logofătu, I. Munteanu, B. Logofătu, M.F. Lăzărescu |
5. THE STUDY OF THE VARIATION OF
LEAKAGE CURRENT  AND
STATICCURRENT GAIN
ON FAST ELECTRON IRRADIATED BIPOLAR TRANSISTORS.
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A. Meșter, N. Băltățeanu, I. Ghiță,
I. Munteanu, V. Grecu, M. Penescu, Preprint, IFA, Cs-24-1997,
p.1-24,1997 |
6.On the thermal stability of polyetylene/polyaniline
blends.
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P.V.Notingher, M.I.Chipară, M.Toacsen, B.Negreanu,
I.Munteanu, L.Georgescu, N.Tomozeiu, E.Barna,
D.Panaitescu, M.D.Chipară, J.R.Romero.
Premiere Atelier Sciantifique Franco-Canadiano-Romain
“Materieux pour L’Electrotechnique ”, Bucharest,
Romania, 9-11 Juin, p.352, 1997.
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7.
On polyaniline-polyvinylchloride blends.
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M.I. Chipară, I. Munteanu,
P.Nothinger, M.D.Chipară, J.R.Romero, B. Negreanu, D. Panaitescu.
IEEE Int.Conf. on Conduction and Breakdown in Solid Dielectrics,
Vasteras, |
8. AFMR study on  (m=Co,
Cr, Fe, Mn, Ni) amorphous ribbons
M.I.Chipară, A.Gălățeanu, M. Morariu,
I. Munteanu, C. Negreanu.
The  Conference
of the Turkish Physical Society, October,
9. A High Sensitivity Magnetometer
with Magnetodiodes.
M.
Volmer, I. Munteanu.
Balcan
Phys. Letters, 5. p.2230-2233, 1997.
10. Physical properties of polyaniline
based blends.
I.
Munteanu, N. Tomozeiu, J.R. Reyes, Ghe. Aldica, M.I.Chipară,
M.D. Chipară, B. Negreanu.
Conferința Națională de Fizică,
16-18 septembrie, Constanța, Romania, 1998.
11. Some Consideration on the Generation
Rate of Irradiation Induced Defects.
A.
Meșter, N. Băltățeanu, I. Munteanu, V. Grecu.
Romanian
Journal of Optoeelectronics, Vol.6,Nr.2, p.23-28, 1998.
12. Geometrical Factor in Galvanopmagnetic
Effects in Some High Electron
Mobility III-V Semiconductors.
M. Logofătu, I. Licea, B. Logofătu, I.
Munteanu.
JSAEM Studies in Applied Electromagnetics
and Mechanics, Vol. 8, p.152-157, 1998.
13. Fizica Semiconductorilor Amorfi.
N.
Tomozeiu, I. Munteanu
Editura
Universității din București, p.1-185, 1999.
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